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 GSM/UMTS Dual Mode Terminal Ultralow Loss Antenna Switch Module
CXG1190EQ/AEQ
Portable telephone terminals are seeing rapid advances in functionality as easily handheld devices. The third generation cellular phone service is poised to take off on a worldwide scale. The CXG1190EQ/AEQ are antenna switching modules that support dual mode operation for both GSM, which holds an large share worldwide, and UMTS, which is the third generation cellular phone standard. In addition to both multiband and multimode support, the CXG1190EQ/ AEQ are high-performance lead frame modules that achieve low insertion loss and a miniature low-height form factor. These modules support the creation of wireless equipment that remains one step ahead using Sony's MMIC technologies.
I Ultralow insertion loss: 0.9 dB in the DCS/PCS Tx path and 0.65 dB in the UMTS (Rx) path Dual low-pass filters: Attenuation 30 dB typical (GSM Tx 2fo, DCS/PCS Tx 2fo) Lead frame module that adopts a mold array package Miniature low-height package: LQFN-28P-01 (4.5 mm x 3.2 mm x 1.3 mm max.)
I
I I
Switching Structure that Achieves Low Insertion Loss
Insertion loss is an important index for switch performance. Switch modules using the conventional LTCC* substrate adopted a structure in which the frequency band was divided into a low band (900 MHz band) and a high band (1800/1900 MHz band) using a diplexer, and after that, the path switches were connected. (See figure 1.) The switch structure adopted by Sony in these products is the SP7T structure. A low-pass filter is inserted in the GSM Tx path. (See figure 2.) In the conventional LTCC module structure, the insertion loss for all of the paths was the sum of the diplexer and the path switches themselves. As a result, the overall loss was quite large. In contrast, in the SP7T structure, only the switch insertion loss occurs in the paths
other than the GSM Tx path, thus achieving low loss. For the GSM Tx path, the SP7T + LPF structure can achieve lower loss than the diplexer structure since a LPF has smaller insertion loss than a diplexer. Furthermore, these devices achieve ultralow loss by using Sony's unique JPHEMT process. This contributes significantly to reduced current consumption during Tx and higher Rx sensitivity.
*: LTCC: Low temperature co-fired ceramic
number of changes to the assembly process in current manufacturing lines. This contributes to lowering the cost of the devices. Since handling is only required for two simple components, an IC and a lowpass filter, Sony was able to shorten the development turn around time. Also, the adoption of a package with a proven track record in the market has the advantage that customers can use these devices with confidence.
Lead Frame Module
Conventional antenna switch modules used in GSM terminals and other products adopt a structure in which passive and active elements, such as PIN diodes, are mounted on an LTCC, FR-4 or similar substrate. However, considering the demands for multimode and multiband operation, miniature low-height form factors, and lower costs in recent cellular phone products, it can easily be seen that it will be difficult to achieve these using these conventional structures. Sony's response to these issues was implemented using the mold array package, which uses lead frames, an existing package technology. By adopting an existing package that uses lead frames, Sony was able to assure the pin count required for the increase in the number of switches due to the use of multimode and multiband operation. Furthermore, this made further miniaturization easy. Another advantage was that it was possible to keep to an absolute minimum the
Miniature Low-Height Form Factor
The mounting area was reduced by making the two low-pass filters integrated in the two Tx paths into one component using LTCC technology. Also, etching technology can be used to perform complicated machining on the lead frame, which plays the role of interface between the internal components. That technology is used for the connections for the internal low-pass filters in these products. Furthermore, Sony optimized the contact area between the internal low-pass filter lands and the lead frame and also optimized the mold sealing thickness above the low-pass filters, thus achieving a miniature lowheight form factor.
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The CXG1190EQ/AEQ ICs could only have been developed by Sony, and were developed from Sony's unique perspective, a perspective unknown at other companies. These devices are already earning an enthusiastic response in the market. We are now planning new products that deploy this technology. Keep your eye on Sony's MMIC technologies!
LPF
Diplexer
Chip
LPF1 LPF2
Rx2
Rx3
Rx4
Tx1 Rx1 Rx2
Tx2 Rx3 Rx4 TRx
TRx
Tx1
Tx2
Rx1
SP3T SW
SP4T SW
I Figure 1 Conventional Antenna Switch Module Block Diagram
I Figure 2 CXG1190EQ Block Diagram
I Figure 3 Internal Structures Drawing
I Table 1 Insertion Loss
0 -10
m8 m9 m10 m11
Forward transmission, dB
Path Tx1 - Ant Tx2 - Ant TRx (Tx) - Ant Ant - Rx1 Ant - Rx2 Ant - Rx3 Ant - Rx4 Ant - TRx (Rx) Condition *1 *2 *3 *4/*5 *4/*5 *4/*5 *4/*5 *6 Insertion Loss (I.L) Min. -- -- -- -- -- -- -- -- Typ. 0.85 0.90 0.60 0.75/0.90 0.75/0.90 0.75/0.90 0.75/0.90 0.65 Max. 1.20 1.25 0.90 1.05/1.20 1.05/1.20 1.05/1.20 1.05/1.20 0.95 dB Unit
dB (S (2, 1))
-20 -30 -40 -50 -60 0 1
m7 m4 m3 m5 m6 m2
2
3 4 freq, GHz
5
6
7
m5 freq = 2.740 GHz m5 = -33.309 m9 freq = 4.570 GHz m9 = -20.061
m2 freq = 1.650 GHz m2 = -37.831 m6 freq = 3.290 GHz m6 = -35.031 m10 freq = 4.940 GHz m10 = -20.393
m3 freq = 1.830 GHz m3 = -31.600 m7 freq = 3.660 GHz m7 = -25.231 m11 freq = 5.490 GHz m11 = -20.133
m4 freq = 2.470 GHz m4 = -29.599 m8 freq = 4.120 GHz m8 = -20.339
*1: Frequency = 824-849, 880-915 MHz, Input Signal is CW, Pin = +34 dBm *2: Frequency = 1710-1785, 1850-1910 MHz, Input Signal is CW, Pin = +32 dBm *3: Frequency = 1920-1980 MHz, Input Signal is CW, Pin = +29 dBm *4: Frequency = 869-894, 925-960 MHz, Input Signal is CW, Pin = -5 dBm *5: Frequency = 1805-1880, 1930-1990 MHz, Input Signal is CW, Pin = -5 dBm *6: Frequency = 2110-2170 MHz, Input Signal is CW, Pin = -5 dBm
I Figure 4 Low-Band Low-Pass Filter Attenuation Characteristics
Tx1 GND Tx2
56 pF 33 pF
0 -10
dB (S (4, 3))
Forward transmission, dB
N.C
-20
m34
33 pF 56 pF
-30
m31
m32
m33
-40 -50 -60 0 1 2 3 4 freq, GHz 5 6 7
100 pF (2)
m31 freq = 3.420 GHz m31 = -37.705 m33 freq = 5.130 GHz m33 = -37.167
m32 freq = 3.820 GHz m32 = -35.452 m34 freq = 5.730 GHz m34 = -27.653
1: Inductor (56 nH) is recommended on Ant port for ESD protection. Capacitors are required on all RF ports for DC blocking. 2: These capacitors are NOT mandatory. 3: Capacitor selection for DC block, For Low band (869-960 MHz): 56 pF For High band (1805-1990 MHz): 33 pF
I Figure 5 High-Band Low-Pass Filter Attenuation Characteristics
I Figure 6 Application Circuit Example
CTL-C
56 nH (1)
N.C N.C N.C N.C N.C GND TRx GND ANT GND
N.C N.C N.C N.C GND
N.C
GND VDD CTL-A CTL-B
Rx1 Rx4 Rx3 Rx2
(3) (3) (3) (3)
GND


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